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| Advanced Information SUF-6000 Product Description Sirenza Microdevices' SUF-6000 is a high gain broadband 2-stage amplifier covering 2-16 GHz for wideband communication and general purpose applications. This pHEMT FET-based amplifier uses a patented self-bias Darlington topology featuring a gain and temperature compensating active bias network that operates from a single 5V supply. Its compact size make it ideal for high-density multi-chip module applications. 2-16 GHz Broadband pHEMT Amplifier Product Features * * * * * * * * Broadband Performance High Gain = 17.4 dB @ 14 GHz P1dB = 12.0 dBm @ 14 GHz IP3 = 24.9 dBm @ 14 GHz 5V Operation, No Dropping Resistor Low Gain Variation vs. Temperature Patented Thermal Design Patented Self-Bias Darlington Circuit 24 20 16 Gain & Return Loss vs. Frequency GSG Probe Data Gain 0 -5 -10 Return Loss (dB) Gain (dB) 12 8 4 0 2 4 6 ORL -15 -20 Applications * * * * * Broadband Communications Test Instrumentation Military & Space LO and IF Mixer Applications High IP3 RF Driver Applications IRL -25 -30 8 10 12 14 16 18 20 Frequency (GHz) Symbol Parameters Units Frequency Min. Typ. Max. Gp Small Signal Power Gain dB P1dB Output Power at 1dB Compression dBm OIP3 Output Third Order Intercept Point dBm NF Noise Figure dB IRL Input Return Loss dB ORL Output Return Loss dB Isol VD ID G/T Rth, j-l Reverse Isolation dB Test Conditions: Test Conditions: Device Operating Voltage V Device Operating Current mA Device Gain Temperature Coefficient dB/C Thermal Resistance (junction-to-backside) mA Typ. C/W V =5V I = 80 S D VD = 5.0V, ID = 107mA, OIP3 Tone Spacing = 1MHz, Pout per tone = 0 dBm ZS = ZL = 50 Ohms, 25C, GSG Probe Data With Bias Tees -34.4 -32.6 5.0 107 TBD TBD OIP3 Tone Spacing = 1 MHz, Pout per tone = 0 dBm 2 GHz 6 GHz 14 GHz 2 GHz 6 GHz 14 GHz 2 GHz 6 GHz 14 GHz 2 GHz 6 GHz 14 GHz 2 GHz 6 GHz 14 GHz 2 GHz 6 GHz 14 GHz 2 GHz 6 GHz 14 GHz 18.0 20.5 17.4 13.0 14.0 12.0 25.3 27.5 24.9 5.0 4.7 6.0 -14.2 -19.7 -12.1 -26.2 -19.4 -11.5 -36.9 TL = 25C ZS = ZL = 50 Ohms Measured with Bias Tees The information provided herein is believed to be reliable at press time. Sirenza Microdevices assumes no responsibility for inaccuracies or omissions. Sirenza Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user's own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Sirenza Microdevices does not authorize or warrant any Sirenza Microdevices product for use in life-support devices and/or systems. Copyright 2007 Sirenza Microdevices, Inc.. All worldwide rights reserved. 303 S. Technology Ct. Broomfield, CO 80021 Phone: (800) SMI-MMIC 1 http://www.sirenza.com EDS-105420 Rev A Advanced Information SUF-6000 2-16 GHz Broadband pHEMT Amplifier Typical Performance (GSG Probe Data) |S21| vs. Frequency 24 20 16 14 P1dB vs. Frequency P1dB (dBm) Gain (dB) 16 12 25C 8 4 0 2 4 6 8 10 12 14 16 18 20 -40C 85C 12 10 8 6 2 4 -20C 25C 85C 6 8 10 12 14 16 18 Frequency (GHz) Frequency (GHz) |S11| vs. Frequency 0 -5 -10 0 -5 -10 25C -40C 85C |S22| vs. Frequency S11 (dB) -15 25C -20 -25 -30 2 4 6 8 10 12 14 16 18 20 -40C 85C S22 (dB) -15 -20 -25 -30 2 4 6 8 10 12 14 16 18 20 Frequency (GHz) Frequency (GHz) OIP3 vs. Frequency (0dBm/tone, 1MHz spacing) 28 26 10 NF vs. Frequency 8 OIP3 (dBm) 24 22 -20C 20 18 2 4 6 8 10 12 14 16 18 25C 85C NF (dB) 6 4 -20C 2 25C 85C 0 2 4 6 8 10 12 14 16 18 Frequency (GHz) 303 S. Technology Ct. Broomfield, CO 80021 Phone: (800) SMI-MMIC 2 Frequency (GHz) http://www.sirenza.com EDS-105420 Rev A Advanced Information SUF-6000 2-16 GHz Broadband pHEMT Amplifier Typical Performance (GSG Probe Data) Freq VD Current (mA) 107 107 107 107 107 107 107 107 107 Gain (dB) 18.0 18.9 19.6 20.2 20.5 19.6 18.4 17.4 14.5 P1dB (dBm) 13.0 13.6 13.7 14.1 14.0 13.2 12.9 12.0 10.6 OIP3 (dBm) 25.3 26.1 26.8 26.8 27.5 26.4 25.9 24.9 23.8 S11 (dB) -14.2 -16.2 -18.6 -20.0 -19.7 -26.3 -19.9 -12.1 -7.9 S22 (dB) -26.2 -32.0 -32.2 -26.9 -19.4 -13.3 -12.1 -11.5 -12.5 NF (dB) 5.0 5.0 5.0 5.0 4.7 5.3 5.6 6.0 7.0 (GHz) (V) 2 5 2.4 5 3 5 4 5 6 5 10 5 12 5 Test Conditions: 5 14 16 5 Test Conditions: GSG Probe Data With Bias Tees, OIP3 Tone Spacing = 1MHz, Pout per tone = 0 dBm, 25C Parameter Max Device Current (ID) Max Device Voltage (VD) Max RF Input Power Absolute Limit 163mA 5.5V 10dBm 150C -40 to +85C -65 to +150C Max Dissipated Power Max Junction Temperature (TJ) Operating Temperature Range (TL) Max Storage Temp. Operation of this device beyond any one of these limits may cause permanent damage. For reliable continuous operation, the device voltage and current must not exceed the maximum operating values specified in the table on page one. Current Variation vs. Temperature Current vs. Voltage 120 115 Bias Conditions should also satisfy the following expression: TL=Backside of die IDVD < (TJ - TL) / RTH, j-l Current (mA) 110 105 100 95 90 4.75 -20C 25C 85C 4.85 4.95 5.05 5.15 5.25 ELECTROSTATIC SENSITIVE DEVICE Appropriate precautions in handling, packaging and testing devices must be observed. Volatage (V) 303 S. Technology Ct. Broomfield, CO 80021 Phone: (800) SMI-MMIC 3 http://www.sirenza.com EDS-105420 Rev A Advanced Information SUF-6000 2-16 GHz Broadband pHEMT Amplifier Pad Description 2 1 Pad # Function Description 1 2 Die Bottom This pad is DC coupled and matched to 50 Ohms. An external DC block is required. This pad is DC coupled and matched to 50 Ohms. RFOUT / Bias Bias is applied through this pad. RFIN GND Die bottom must be connected to RF/DC ground using silver-filled conductive epoxy. Notes: 1. All Dimensions in Inches [Millimeters]. 2. No connection required for unlabeled bond pads. 3. Die Thickness is 0.004 (0.100). 4. Typical bond pad is 0.004 (0.100) square. 5. Backside metalization: Gold. 6. Backside is Ground. 7. Bond pad metalization: Gold. Device Assembly +5V Interconnect Wire or Ribbon Choke Bypass Cap(s) 50 Line 50 Line DC Block DC Block 3-5 mil gap 303 S. Technology Ct. Broomfield, CO 80021 Phone: (800) SMI-MMIC 4 http://www.sirenza.com EDS-105420 Rev A |
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